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hafnium silicide obtained

Electrochemical synthesis of hafnium silicides
The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi2 is obtained using galvanostatic electrolysis. Discover the
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Electrochemical synthesis of hafnium silicides | SpringerLink
2009-7-29 · The method of cyclic voltammetry was used to study cathodic processes in a molten salt of NaCl-KCl-NaF (10 wt %)-K 2 HfF 6-K 2 SiF 6.The parameters of electrochemical synthesis allowing synthesizing hafnium silicides are determined and hafnium silicide HfSi 2 is obtained using galvanostatic electrolysis.
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Hafnium silicide target and manufacturing method for ...
2003-7-3 · Thereby obtained is a hafnium silicide target capable of eliminating the porous structure, and which has a relative density of 95% or more. When the relative density becomes less than 95%, the brittleness deteriorates due to the lack of density, and the workability also deteriorates thereby.
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High Purity Hafnium Silicide HfSi2 Powder CAS 12401-56-8 ...
2022-1-23 · About Hafnium Silicide HfSi2 Powder: Hafnium silicide is a kind of transition metal silicide, which is a kind of refractory intermetallic compound. Because of its unique physical and chemical properties, hafnium silicide has
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Structure determination of three-dimensional hafnium ...
2008-12-15 · Rectangular Hf silicide islands in two domains were obtained by electron beam evaporation of metallic hafnium onto a (2 × 1)-reconstructed Si(1 0 0) surface and subsequent annealing at 750 °C. While the Si 2p photoelectron signal was decomposed into several chemical components, only one chemical component of hafnium was evident in the ...
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Hafnium silicate formation by ultra-violet/ozone oxidation ...
2003-2-3 · We report the room temperature growth of hafnium silicate by ultra-violet/ozone oxidation of hafnium silicide. Hafnium silicide was deposited by magnetron sputtering on hydrogen terminated (1 0 0) Si.The film was then exposed to UV radiation while in an O 2 ambient. Hafnium silicate films are obtained with no detectable SiO x interfacial layer as characterized by X-ray
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(PDF) Hafnium silicide formation on Si(100) upon annealing
2006-8-16 · hafnium silicide forma tion on si 共 100 兲 upon ¼ physical review b 74, 075319 共 2006 兲 075319-7 then 600 ° C 兲 the LEED pattern is the same
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Atomic scale effects of zirconium and hafnium ...
2003-10-16 · Atomic Scale Effects of Zirconium and Hafnium Incorporation at a Model Silicon/Silicate Interface by First Principles Calculations ... over silicide-like bonding at the Si interface. The calculations ... ference raises the possibility that even the value obtained with the larger cells is still not well converged with respect to the cell size ...
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Journal of Alloys and Compounds - NIST
Silicide Transport properties Magnetism First Principles Calculations Neutron Scattering NiSi ... We obtained high quality samples for sintering temperatures of 950 C and 970 C. The sample for which data is given was prepared by (1) ramping to 970 C over 4 h, (2) holding at 970 C for 24 h and (3) cool down to
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Fundamental studies on alternative high-kappa gate ...
At the highest annealing temperature used (i.e., 1000°C), formation of hafnium silicide is observed at the interface. From these studies, detailed fundamental information of interfacial changes due to thermal annealing is obtained, presented and discussed. For the first time, technique with a spatial resolution of 0.2 nm has revealed ...
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High Purity Hafnium Silicide HfSi2 Powder CAS 12401-56-8 ...
About Hafnium Silicide HfSi2 Powder: Hafnium silicide is a kind of transition metal silicide, which is a kind of refractory intermetallic compound. Because of its unique physical and chemical properties, hafnium silicide has been successfully used
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99.9% HfSi2 ,silicide H powder CAS 12401-56-8|Ozbo
2021-10-22 · Hafnium silicide is a transition metal silicide, a type of refractory intermetallic compound. Because of its unique physical and chemical properties, it has been successfully applied to complementary metal oxide semiconductor components, thin film coatings, bulk structural components, and electric heating. Components, thermoelectric materials and
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Fundamental studies on alternative high-kappa gate ...
At the highest annealing temperature used (i.e., 1000°C), formation of hafnium silicide is observed at the interface. From these studies, detailed fundamental information of interfacial changes due to thermal annealing is obtained, presented and discussed. For the first time, technique with a spatial resolution of 0.2 nm has revealed ...
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Hf-based barrier layers for Cu-metallization, Proceedings ...
2010-2-15 · Constant relation between silicon and hafnium intensities near the substrate surface can be noticed. Samples with multilayer Hf-Si structure were annealed at 700-900ÂºC for 2 min to form hafnium silicide. Auger profiles for obtained after annealing at 700ÂºC and 900ÂºC barrier HfSix/Si systems are presented on fig.6 and fig.7.
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(PDF) Structure determination of three-dimensional
Photoelectron diffraction study and structure determination of ultrathin hafnium silicide layers on silicon(100) using Mg Kα radiation and synchrotron light. By G. Kleiman. Hafnium silicide formation on Si(100) upon annealing. By G. Kleiman and A. Pancotti.
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Atomic scale effects of zirconium and hafnium ...
2003-10-16 · Atomic Scale Effects of Zirconium and Hafnium Incorporation at a Model Silicon/Silicate Interface by First Principles Calculations ... over silicide-like bonding at the Si interface. The calculations ... ference raises the possibility that even the value obtained with the larger cells is still not well converged with respect to the cell size ...
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In situ, real-time characterization of silicide ...
Evidence was obtained indicating that the coarsening of the silicide islands is strongly influenced by local variations in the size, shape, and number of nanostructures on the surface. The titanium, hafnium, and zirconium silicide nanostructures were observed to grow via Ostwald ripening and attractive migration and coalescence (AMC) at ...
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Nitrogen Incorporation into Hafnium Oxide Films by
2007-5-31 · results of the nitrogen ﬁlling of the O-vacancies and the nitridation of interfacial hafnium silicide bonds. [DOI: 10.1143/JJAP.46.3234] KEYWORDS: nitrogen, hafnium oxide, X-ray photoelectron spectroscopy, oxygen vacancy 1. Introduction The revolutionary progress in silicon microelectronics is one of the premium pillars for today’s ...
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Niobium-Base Refractory Alloys with Silicide and Carbide ...
2018-6-16 · Japanese specialists studied [7,8,9,10] alloys with heavy elements, i.e., molybdenum, tungsten and hafnium introduced in a total amount of up to 25%, and carbon. The alloys were obtained by arc melting in an argon atmosphere in a cold copper noncontact crucible without subsequent directional crystallization.
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Hafnium (Hf) | AMERICAN ELEMENTS
2022-1-29 · Hafnium is a Block D, Group 4, Period 6 element. The number of electrons in each of Hafnium's shells is 2, 8, 18, 32, 10, 2 and its electronic configuration is [Xe] 4f 14 5d 2 6s 2. In its elemental form, CAS 7440-58-6, hafnium has a steel gray appearance. Hafnium does not exist as a free element in nature.
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Highly pure hafnium material, target and thin film ...
Hafnium silicide target for gate oxide film formation and its production method: 2007-07-10: Irumata et al. 20070018138: Highly pure hafnium material, target thin film comprising the same and method for producing highly pure hafnium ... The obtained hafnium sponge was further subject to electron beam melting to remove volatile elements, gas ...
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In situ, real-time characterization of silicide ...
Evidence was obtained indicating that the coarsening of the silicide islands is strongly influenced by local variations in the size, shape, and number of nanostructures on the surface. The titanium, hafnium, and zirconium silicide nanostructures were observed to grow via Ostwald ripening and attractive migration and coalescence (AMC) at ...
Details
Niobium-Base Refractory Alloys with Silicide and Carbide ...
2018-6-16 · Japanese specialists studied [7,8,9,10] alloys with heavy elements, i.e., molybdenum, tungsten and hafnium introduced in a total amount of up to 25%, and carbon. The alloys were obtained by arc melting in an argon atmosphere in a cold copper noncontact crucible without subsequent directional crystallization.
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Key Engineering Materials Vol. 616 | Scientific.Net
The obtained hafnium carbide powder was densified via spark plasma sintering (SPS) at 1950 oC using molybdenun silicide as sintering additive. Microstructure and mechanical properties of the obtained hafnium carbide ceramics were investigated.
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Fundamental studies on alternative high-kappa gate ...
At the highest annealing temperature used (i.e., 1000°C), formation of hafnium silicide is observed at the interface. From these studies, detailed fundamental information of interfacial changes due to thermal annealing is obtained, presented and discussed. For the first time, technique with a spatial resolution of 0.2 nm has revealed ...
Details
Zirconium and/or hafnium silicon-oxynitride gate ...
1998-7-15 · In another embodiment according to the invention, a zirconium or hafnium silicon-oxynitride gate dielectric is formed by depositing zirconium silicide or hafnium silicide on a clean Si surface, oxynitridating the silicide layer, and annealing this structure. In this embodiment, a substrate such as shown in either FIG. 3 or FIG. 4 is used.
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Method for providing a metal silicide layer on a substrate ...
For instance, Rideout in IBM Technical Disclosure Bulletin, Volume 17, No. 6, November 1974, Reducing the Sheet Resistance of Polysilicon Lines in Integrated Circuits, pages 1831-33 suggested the use of hafnium silicide obtained by depositing hafnium on top of polycrystalline silicon and then heating to react the hafnium and polycrystalline ...
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Formation of the Structure of a Eutectic Alloy of the Nb ...
2017-11-11 · 2. The obtained composite of the Nb – Si system alloy consists of a matrix of niobium solid solution with bcc lattice and a reinforcing phase of niobium silicide with hexagonal lattice. According to XRD data, the volume fraction of
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Incorporation of hafnium and platinum metal in vertical ...
2018-6-20 · A novel, vertical single-diffused metal–oxide–semiconductor (VSDMOS) structure is proposed by applying workfunction engineering to a vertical power metal–oxide–semiconductor field-effect transistor (MOSFET) with source and drain regions formed using the charge plasma concept. Electron and hole plasma was induced by employing hafnium and platinum metal.
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hafnium silicide obtained

Electrochemical synthesis of hafnium silicides

Electrochemical synthesis of hafnium silicides | SpringerLink

Hafnium silicide target and manufacturing method for ...

High Purity Hafnium Silicide HfSi2 Powder CAS 12401-56-8 ...

Structure determination of three-dimensional hafnium ...

Hafnium silicate formation by ultra-violet/ozone oxidation ...

(PDF) Hafnium silicide formation on Si(100) upon annealing

Atomic scale effects of zirconium and hafnium ...

Journal of Alloys and Compounds - NIST

Fundamental studies on alternative high-kappa gate ...

High Purity Hafnium Silicide HfSi2 Powder CAS 12401-56-8 ...

99.9% HfSi2 ,silicide H powder CAS 12401-56-8|Ozbo

Fundamental studies on alternative high-kappa gate ...

Hf-based barrier layers for Cu-metallization, Proceedings ...

(PDF) Structure determination of three-dimensional

Atomic scale effects of zirconium and hafnium ...

In situ, real-time characterization of silicide ...

Nitrogen Incorporation into Hafnium Oxide Films by

Niobium-Base Refractory Alloys with Silicide and Carbide ...

Hafnium (Hf) | AMERICAN ELEMENTS

Highly pure hafnium material, target and thin film ...

In situ, real-time characterization of silicide ...

Niobium-Base Refractory Alloys with Silicide and Carbide ...

Key Engineering Materials Vol. 616 | Scientific.Net

Fundamental studies on alternative high-kappa gate ...

Zirconium and/or hafnium silicon-oxynitride gate ...

Method for providing a metal silicide layer on a substrate ...

Formation of the Structure of a Eutectic Alloy of the Nb ...

Incorporation of hafnium and platinum metal in vertical ...

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